Mutual passivation of electrically active and isovalent impurities.

نویسندگان

  • K M Yu
  • W Walukiewicz
  • J Wu
  • D E Mars
  • D R Chamberlin
  • M A Scarpulla
  • O D Dubon
  • J F Geisz
چکیده

The alloy GaN(x) As(1-x) (with x typically less than 0.05) is a novel semiconductor that has many interesting electronic properties because of the nitrogen-induced dramatic modifications of the conduction band structure of the host material (GaAs). Here we demonstrate the existence of an entirely new effect in the GaN(x) As(1-x) alloy system in which the Si donor in the substitututional Ga site (Si(Ga)) and the isovalent atom N in the As sublattice (N(As)) passivate each other's electronic activity. This mutual passivation occurs in Si-doped GaN(x) As(1-x) through the formation of nearest-neighbour Si(Ga) -N(As) pairs and is thermally stable up to 950 degrees C. Consequently, Si doping in GaN(x) As(1-x) under equilibrium conditions results in a highly resistive GaN(x) As(1-x) layer with the fundamental bandgap governed by a net 'active' N, roughly equal to the total N content minus the Si concentration. Such mutual passivation is expected to be a general phenomenon for electrically active dopants and localized state impurities that can form nearest-neighbour pairs.

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عنوان ژورنال:
  • Nature materials

دوره 1 3  شماره 

صفحات  -

تاریخ انتشار 2002